| 发明名称 |
HIGH ASPECT RATIO ETCH WITH COMBINATION MASK |
| 摘要 |
A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask. |
| 申请公布号 |
US2015200106(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201514671601 |
申请日期 |
2015.03.27 |
| 申请人 |
Lam Research Corporation |
发明人 |
GUHA Joydeep;REDDY Sirish K.;CHATTOPADHYAY Kaushik;MOUNTSIER Thomas W.;EPPLER Aaron;LILL Thorsten;VAHEDI Vahid;SINGH Harmeet |
| 分类号 |
H01L21/308;H01L21/306 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for etching features in a stack, comprising:
forming a combination hardmask, comprising;
forming a first hardmask layer comprising carbon or silicon oxide over the stack;forming a second hardmask layer comprising metal over the first hardmask layer; andpatterning the first and second hardmask layers; and etching the stack through the combination hardmask. |
| 地址 |
Fremont CA US |
