CUT LAST SELF-ALIGNED LITHO-ETCH PATTERNING

摘要

The present disclosure relates to a method of performing a self-aligned litho-etch (SALE) process. In some embodiments, the method is performed by forming a spacer material over a substrate having a multi-layer hard mask with a first layer and an underlying second layer to provide a first cut layer, and forming a reverse material over the spacer material to form a second cut layer. A second plurality of openings, cut according to the second cut layer, are formed to expose the second layer at a positions corresponding to a second plurality of shapes of a SALE design layer. A first plurality of openings, cut according to the first cut layer, are formed to expose the second layer at a positions corresponding to a first plurality of shapes of the SALE design layer. The second layer is etched according to the first and second plurality of openings.

主权项

1. A method of performing a self-aligned litho-etch (SALE) process, comprising:
forming a spacer material over a substrate comprising a multi-layer hard mask having a first layer and an underlying second layer to provide a first cut layer comprising the spacer material at a first cut position; forming a reverse material over the spacer material to form a second cut layer comprising the reverse material at a second cut position over the substrate; forming a second plurality of openings, cut according to the second cut layer, to expose the second layer at a second plurality of positions corresponding to a second plurality of shapes of a SALE design layer; forming a first plurality of openings, cut according to the first cut layer, to expose the second layer at a first plurality of positions corresponding to a first plurality of shapes of the SALE design layer; and etching the second layer according to the first plurality of openings and the second plurality of openings.