发明名称 |
CARBON FILM STRESS RELAXATION |
摘要 |
Methods are described for treating a carbon film on a semiconductor substrate. The carbon may have a high content of sp3 bonding to increase etch resistance and enable new applications as a hard mask. The carbon film may be referred to as diamond-like carbon before and even after treatment. The purpose of the treatment is to reduce the typically high stress of the deposited carbon film without sacrificing etch resistance. The treatment involves ion bombardment using plasma effluents formed from a local capacitive plasma. The local plasma is formed from one or more of inert gases, carbon-and-hydrogen precursors and/or nitrogen-containing precursors. |
申请公布号 |
WO2015105622(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
WO2014US69889 |
申请日期 |
2014.12.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
UNDERWOOD, BRIAN SAXTON;MALLICK, ABHIJIT BASU |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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