| 摘要 |
<p>THE METHOD FOR PRODUCING A SILICON EPITAXIAL WAFER ACCORDING TO THE PRESENT INVENTION HAS: A GROWTH STEP F AT WHICH AN EPITAXIAL LAYER IS GROWN ON A SILICON SINGLE CRYSTAL SUBSTRATE (10); A FIRST POLISHING STEP D AT WHICH, BEFORE THE GROWTH STEP, AT LEAST A FRONT SURFACE OF THE SILICON SINGLE CRYSTAL SUBSTRATE (10) IS POLISHED WITHOUT USING ABRASIVE GRAINS; AND A SECOND POLISHING STEP G AT WHICH AT LEAST THE FRONT SURFACE OF THE SILICON SINGLE CRYSTAL SUBSTRATE (10) IS SUBJECTED TO FINISH POLISHING AFTER THE GROWTH STEP.</p> |
