SOI WAFER MANUFACTURING METHOD

摘要

The present invention provides a method for manufacturing an SOI wafer including a step of forming an insulator film on an entire surface of a bond wafer before bonding, bringing a bonded wafer before delaminating the bond wafer at an ion implanted layer into contact with a liquid that enables dissolving the insulator film while protecting the insulator film on a back surface on the opposite side of a bonding surface of the bond wafer, or exposing the same to a gas that enables dissolving the insulator film, and thus etching the insulator film placed between the bond wafer and a base wafer from an outer peripheral end of the bonded wafer toward a center of the same. As a result, it is possible to provide the method for manufacturing an SOI wafer by which a width of a terrace can be controlled, generation of an SOI island can be prevented, and scratches and an abnormality in SOI film thickness distribution can be suppressed at the time of forming the insulator film on the bond wafer and performing bonding.