Physical vapor transport growth system for simultaneously growing more than one SiC single crystal, and method of growing

摘要

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises according to the present invention comprises a crucible (102) containing two growth compartments (114A, 114B) comprising each at least one SiC seed crystal (106A, 106B) and a source material compartment (112) for containing a SiC source material (104). The source material compartment (112) is arranged symmetrically between said growth compartments (114A, 114B) and is separated from each of the growth compartments by a gas permeable porous membrane (116A, 116B; 116A', 116B').