| 摘要 |
<p>A method for producing a light-absorbing semiconductor component, wherein at least one partial area of a semiconductor substrate is irradiated with a plurality of laser pulses having a predefinable length, wherein the pulse shape of the laser pulses is adapted to at least one predefinable desired shape by modulation of the amplitude and/or of the polarization. A semiconductor component for converting electromagnetic radiation into electrical energy, includes a crystalline semiconductor substrate having a first and an opposite second side, wherein a dopant is introduced at least in a partial volume of the semiconductor substrate which adjoins the first side, such that a first pn junction is formed between the partial volume and the substrate, wherein at least one first partial area of the second side is provided with a dopant and a surface modification, such that a second pn junction is formed.</p> |
