发明名称 |
METHOD FOR PRODUCING GRAPHENE/SIC COMPOSITE MATERIAL AND GRAPHENE/SIC COMPOSITE MATERIAL OBTAINED BY SAME |
摘要 |
A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO 2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO 2 layer was formed. |
申请公布号 |
EP2351706(A4) |
申请公布日期 |
2015.07.15 |
申请号 |
EP20090809589 |
申请日期 |
2009.08.28 |
申请人 |
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY |
发明人 |
KUSUNOKI, MICHIKO;NORIMATSU, WATARU |
分类号 |
C01B31/04;B82Y30/00;B82Y40/00;C30B29/02;C30B29/36;C30B33/00 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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