| 摘要 |
The present invention relates to a cassette for an apparatus for depositing an atomic layer and an apparatus for depositing an atomic layer having the same, having a chamfer shape to coincide with a shape of a wafer wherein an edge portion of a cassette is loaded, and capable of stably performing a process with respect to a plurality of cassettes by accurately supplying process gas supplied by a middle gas supply means of an apparatus for depositing an atomic layer performing a process in a state of mounting the cassettes to a gap between substrates through the chamfer portion. According to the present invention, an apparatus for depositing an atomic layer, which performs a process for depositing an atomic layer with respect to all substrates charged into a process chamber in a state of charging a plurality of cassettes wherein a plurality of substrates are loaded into the process chamber in a line, comprises: a middle gas supply means installed in a contact point of each cassette in the process chamber and supplying process gas; and a cassette having an edge unit wherein an edge portion has a chamfer shape. |
