| 摘要 |
A semiconductor light-emitting device (100) is provided. The semiconductor light-emitting device (100) may include a light-emitting structure (135), an electrode (115), an ohmic layer (150), an electrode layer (160), an adhesion layer (170), and a channel layer (140). The light-emitting structure (135) may include a compound semiconductor layer. The electrode (115) may be disposed on the light-emitting structure (135). The ohmic layer (150) may be disposed under the light-emitting structure (135). The electrode layer (160) may include a reflective metal under the ohmic layer (150). The adhesion layer (170) may be disposed under the electrode layer (160). The channel layer (140) may be disposed along a bottom edge of the light-emitting structure (135). |
