| 摘要 |
<p>A semiconductor substrate of a semiconductor device includes a body region of a first conductivity type, a drift region of a second conductivity type coming into contact with a lower surface of the body region, a gate electrode that is provided in a gate trench passing through the body region and extending to the drift region and faces the body region, and a gate insulator that is provided between the gate electrode and a wall surface of the gate trench. An inverted U-shaped section is formed in a lower surface of the gate insulator, and a floating region of the first conductivity type is formed in the inverted U-shaped section. The floating region protrudes under a portion that is located at a lowermost portion in the lower surface of the gate insulator.</p> |
