| 摘要 |
<P>PROBLEM TO BE SOLVED: To not only achieve simplification and miniaturization of a sensor configuration but also improve the electrostatic resistance of a sensor and surely remove static electricity charged on an ESD protection layer. <P>SOLUTION: An ISFET sensor includes a FET 22, an ion sensitive layer 24 covering a gate part G of the FET 22, an ESD protection layer 25 coating the parts other than the gate part G, and an external protection circuit 4 connected to the ESD protection layer 25 having an ESD protection element 5. The impedance of circuits 8 and 9 constituted of the FET 22 is set to be greater than the impedance of the external protection circuit 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
