发明名称 |
A semiconductor device |
摘要 |
The reliability of a semiconductor device including a power semiconductor element is improved. The basic idea in embodiments is to make the band gap of a cell region smaller than the band gap of a peripheral region. Specifically, a lower band gap region having a smaller band gap than the band gap of an epitaxial layer is formed in the cell region. In addition, a higher band gap region having a larger band gap than the band gap of the epitaxial layer is formed in the peripheral region. |
申请公布号 |
EP2894673(A1) |
申请公布日期 |
2015.07.15 |
申请号 |
EP20140199770 |
申请日期 |
2014.12.22 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
EGUCHI, SATOSHI;NAKAZAWA, YOSHITO |
分类号 |
H01L29/78;H01L29/06;H01L29/165;H01L29/739;H01L29/861 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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