发明名称 Reactive sputter deposition of dielectric films
摘要 <p>Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.</p>
申请公布号 EP2660350(B1) 申请公布日期 2015.07.15
申请号 EP20130166446 申请日期 2013.05.03
申请人 JDS UNIPHASE CORPORATION 发明人 OCKENFUSS, GEORG J.
分类号 C23C14/00;C23C14/10;C23C14/34;H01J37/34 主分类号 C23C14/00
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