| 摘要 |
The present invention relates to an ingot growth apparatus comprising: a chamber providing a space for performing an ingot growth process; a quartz crucible, which is a heat-resistant container, disposed inside the chamber; a heater for applying heat to the quartz crucible; and a seed crystal raising means for immersing a seed crystal in a silicon melt and rotating and raising thereof to grow an ingot wherein the seed crystal raising means comprises: a cable connected to a seed chuck wherein the seed crystal is mounted; a shaft connected to the cable; and a drive unit installed on an upper part of the chamber and for rotating and lifting the seed chuck by way of the shaft and the cable. The present invention combines the advantages of a cable-type raising means and the advantages of a shaft-type raising means, and thus, has the advantages of minimizing a volume of the seed raising means and simplifying a structure thereof. In addition, the seed crystal raising means of the present invention is capable of expanding a range of rotation numbers per available minute, preventing an orbit phenomenon, and suppressing an abnormal growth of ingot. Accordingly, there is the advantage of producing an ingot which is defect free and which has a uniform diameter. |
