| 摘要 |
<p>An embodiment of the present invention relates to a light emitting element, a method to manufacture a light emitting element, a light emitting element package, and a lighting system. According to the embodiment, the light emitting element comprises: a first conductive semiconductor layer (112); an In_pGa_(1-p)N/In_xAl_yGa_(1-x-y)N superlattice layer (113) (where 0<p<1, 0<x<1, 0<y<1) on the first conductive semiconductor layer (112); an active layer (114) on the In_pGa_(1-p)N/In_xAl_yGa_(1-x-y)N superlattice layer (113); and a second conductive semiconductor layer (116) on the active layer (114). Therefore, the present invention is capable of efficiently increasing a quantum confinement effect while minimizing stress applied to a quantum well.</p> |
