Increased magnetoresistance in an inverted orthogonal spin transfer layer stack

摘要

A magnetic device includes a pinned magnetic layer and a free magnetic layer including a first body-centered cubic material and having a variable magnetization vector that has a first stable state and a second stable state. The magnetic device also includes a first non-magnetic layer and a reference layer. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer and includes a second body-centered cubic material that interfaces with the first body-centered cubic material. The magnetic device includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse through the magnetic device switches the variable magnetization vector.

主权项

1. A magnetic device comprising:
a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction; a free magnetic layer comprising a first body-centered cubic material and having a variable magnetization vector having at least a first stable state and a second stable state; a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer and including a second body-centered cubic material that interfaces with the first body-centered cubic material; a reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; and a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having a selected amplitude and duration, through the magnetic device switches the variable magnetization vector, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer.