Semiconductor device and method of fabricating the same

摘要

A semiconductor device and a method for manufacturing the same are capable of improving GIDL in a buried gate, and preventing degradation of device characteristics and reliability due to reduction in gate resistance. The semiconductor device may include: junction regions formed at both sidewalls of a trench formed in a semiconductor substrate; a first gate electrode formed in a lower portion of the trench; a second gate electrode formed on at least one inner sidewall of the trench which overlaps one of the junction regions on the first gate electrode; and a third gate electrode formed on one side of the second gate electrode on the first gate electrode.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a trench, the trench having first and second sides; junction regions formed in the semiconductor substrate and disposed over the first and the second sides of the trench; a first gate electrode formed in a lower portion of the trench; a second gate electrode formed over at least one inner sidewall of the trench, formed to overlap one of the junction regions, and formed over the first gate electrode; and a third gate electrode formed over one side of the second gate electrode and over the first gate electrode, wherein the second gate electrode is electrically coupled to the first gate electrode.