Complementary metal oxide semiconductor transistor and fabricating method thereof

摘要

A fabricating method of CMOS transistor includes following steps. A first gate and a second gate are formed on a substrate. A gate insulator is formed on the substrate to cover the first and second gates. A first source, a first drain, a second source, and a second drain are formed on the gate insulator. The first source and the first drain are above the first gate. The second source and the second drain are above the second gate. A first channel layer and a mask layer are formed on the gate insulator. The mask layer is on the first channel layer. The first channel layer is above the first gate and contacts with the first source and the first drain. A second channel layer is formed on the gate insulator. The second channel layer is above the second gate and contacts with the second source and the second drain.

主权项

1. A fabricating method of a complementary metal oxide semiconductor transistor, comprising:
forming a first gate and a second gate on a substrate; forming a gate insulator on the substrate to cover the first gate and the second gate; forming a first channel layer and a mask layer on the gate insulator, wherein the mask layer is located on the first channel layer, and the first channel layer and the mask layer are located above the first gate; forming a second channel layer on the gate insulator, wherein the second channel layer is located above the second gate, wherein the method of forming the second channel layer comprises forming a second channel material layer on the mask layer, the first channel layer and the gate insulator, and patterning the second channel material layer to form the second channel layer; removing the mask layer, wherein the mask layer is removed at the time when the second channel material layer is patterned; and forming a first source, a first drain, a second source, and a second drain, wherein the first source and the first drain are in contact with the first channel layer, and the second source and the second drain are in contact with the second channel layer.