| 发明名称 | Integrated circuit, semiconductor device and method of manufacturing a semiconductor device | ||
| 摘要 | An integrated circuit including a semiconductor device has a power component including a plurality of trenches in a cell array, the plurality of trenches running in a first direction, and a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component. The integrated circuit further includes isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches. The isolation trenches run in a second direction that is different from the first direction. | ||
| 申请公布号 | US9082773(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201313754240 | 申请日期 | 2013.01.30 |
| 申请人 | Infineon Technologies AG | 发明人 | Meiser Andreas;Zundel Markus;Thiele Steffen |
| 分类号 | H01L27/105;H01L23/544;H01L21/762;H01L27/088;H01L21/8234 | 主分类号 | H01L27/105 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. An integrated circuit including a semiconductor device, comprising: a power component comprising a plurality of trenches in a cell array, the plurality of trenches running in a first direction; a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component; and an isolation trench running in a second direction different from the first direction, an insulating material being disposed in the isolation trench, the isolation trench being disposed between the sensor component and the power component along the first direction. | ||
| 地址 | Neubiberg DE | ||