发明名称 IC scan cell coupled to TSV top and bottom contacts
摘要 An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.
申请公布号 US9081064(B2) 申请公布日期 2015.07.14
申请号 US201213649808 申请日期 2012.10.11
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Whetsel Lee D.
分类号 G01R31/26;G01R31/3185;H01L21/66;G01R31/28;H01L23/48 主分类号 G01R31/26
代理机构 代理人 Bassuk Lawrence J.;Brill Charles A.;Cimino Frank D.
主权项 1. An integrated circuit die comprising: (a) a substrate of semiconductor material having a top surface, a bottom surface, and a first opening through the substrate between the top surface and the bottom surface; (b) a first through silicon via having a first conductive body in the opening, having a first top contact point coupled to the first body at the top surface, and having a first bottom contact point coupled to the first body at the bottom surface; and (c) a first scan cell having a first serial input, a first serial output, first control inputs, a first voltage reference input, a first response input coupled to one of the first contact points, and a first stimulus output coupled to the other one of the first contact points, the first scan cell including a multiplexer and a flip-flop coupled in series between the first serial input and the first serial output.
地址 Dallas TX US