Stacked semiconductor device and method of forming the same related cases

摘要

A stacked semiconductor device includes a CMOS device and a MEMS device. The CMOS device includes a multilayer interconnect with metal elements disposed over the multilayer interconnect. The MEMS device includes metal sections with a first dielectric layer disposed over the metal sections. A cavity in the first dielectric layer exposes portions of the metal sections. A dielectric stop layer is disposed at least over the interior surface of the cavity. A movable structure is disposed over a front surface of the first dielectric layer and suspending over the cavity. The movable structure includes a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features. The CMOS device is bonded to the MEMS device with the metal elements toward the flexible dielectric membrane.

主权项

1. A stacked semiconductor device comprising:
a complementary metal-oxide-semiconductor (CMOS) device, the CMOS device comprising:
a first substrate having at least one transistor disposed over the first substrate;a multilayer interconnect disposed over the at least one transistor and electrically coupled to the at least one transistor; andmetal elements disposed over the multilayer interconnect; and a micro-electro-mechanical system (MEMS) device, the MEMS device comprising:
a second substrate;metal sections over the second substrate;a first dielectric layer disposed over the metal sections, the first dielectric layer having a thickness at least larger than 0.5 micrometer;a cavity disposed in the first dielectric layer and exposing portions of the metal sections, the cavity having an interior surface;a dielectric stop layer disposed at least over the interior surface of the cavity; anda movable structure disposed over a front surface of the first dielectric layer and suspending over the cavity, the movable structure including a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features, wherein the CMOS device is bonded to the MEMS device with the metal elements.