| 发明名称 | Graphene base transistor having compositionally-graded collector barrier layer | ||
| 摘要 | A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer. | ||
| 申请公布号 | US9082809(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201213473873 | 申请日期 | 2012.05.17 |
| 申请人 | IHP GmbH—Innovations for High Performance Microelectronics | 发明人 | Dabrowski Jaroslaw;Mehr Wolfgang;Scheytt Johann Christoph;Lupina Grzegorz |
| 分类号 | H01L29/06;H01L29/737;H01L29/08;H01L29/10;H01L29/16;H01L29/76 | 主分类号 | H01L29/06 |
| 代理机构 | Ware, Fressola, Maguire & Barber LLP | 代理人 | Ware, Fressola, Maguire & Barber LLP |
| 主权项 | 1. A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, wherein the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer and which has a dielectric constant that decreases with increasing distance from the base layer in the direction pointing from the base layer to the collector layer. | ||
| 地址 | Frankfurt DE | ||