| 发明名称 | Method of manufacturing semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening. | ||
| 申请公布号 | US9082716(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414245304 | 申请日期 | 2014.04.04 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Shitomi Takuichiro;Kawase Yusuke;Yamashita Junichi;Yoshino Manabu |
| 分类号 | H01L21/336;H01L21/308;H01L21/306 | 主分类号 | H01L21/336 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of said substrate; forming a protective film on said top surface nitride film; removing said bottom surface nitride film by wet etching while said top surface nitride film is being protected by said protective film; removing said protective film after said removing of said bottom surface nitride film; patterning said top surface nitride film so as to form an opening in said top surface nitride film; and forming a second oxide film on said bottom surface of said substrate while forming a first oxide film on a surface portion of said substrate which is exposed by said opening. | ||
| 地址 | Tokyo JP | ||