Nonvolatile memory device

摘要

A nonvolatile memory device includes an operation control unit, a reference voltage generating unit, and a sensing unit. The operation control unit is configured to select a unit cell from unit cells to perform reading and writing operations. The reference voltage generating unit is configured to voltage-divide a read voltage using series-connected resistors and generate a reference voltage based on the voltage-divided read voltage. The sensing unit is configured to compare a size of a voltage through an e-fuse of the selected unit cell based on the read voltage with the reference voltage, and sense data of the e-fuse of the selected unit cell. The nonvolatile memory device also includes a read current supply unit configured to output the read voltage to the unit cells during a reading operation of the nonvolatile memory device.

主权项

1. A nonvolatile memory device, comprising:
unit cells comprising an e-fuse and an input unit configured to provide the e-fuse with a write voltage during a writing operation of the nonvolatile memory device; a read current supply unit which provides a read voltage to the unit cells during reading operation of the nonvolatile memory device; an operation control unit configured to select a unit cell from the unit cells to perform reading and writing operations; a reference voltage generating unit configured to voltage-divide the read voltage using series-connected resistors and generate a reference voltage based on the voltage-divided read voltage; and a sensing unit configured to compare a size of a voltage through an e-fuse of the selected unit cell based on the read voltage with the reference voltage, and sense data of the e-fuse of the selected unit cell, wherein the e-fuse is configured to store 1-bit information and the unit cells comprise a first switching device configured to selectively output the read voltage to the e-fuse of the unit cells, a second switching device configured to enable an electric current to flow through the e-fuse of the unit cells according to the read voltage, and a third switching device configured to enable electric current to flow through the e-fuse according to the write voltage.