发明名称 |
Fractal interconnects for neuro-electronic interfaces and implants using same |
摘要 |
A neuro-electronic interface device has a micro-electrode electrically connected to an interconnect that has scaling gradients between 1.1 and 1.9 over a scaling range of at least one order of magnitude. The device preferably has an array of such fractal interconnects in electrical contact with an array of micro-electrodes. Such fractal interconnect arrays may be components of implants including a retinal implant device having an array of photodetectors in electrical contact with the array of micro-electrodes. The interconnects may be fabricated by forming nanoscale particles and depositing them onto a non-conductive surface that is smooth except for electrodes which serve as nucleation sites for the formation of fractal interconnect structures through diffusion limited aggregation. |
申请公布号 |
US9079017(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201112931978 |
申请日期 |
2011.02.15 |
申请人 |
University of Oregon;University of Canterbury |
发明人 |
Taylor Richard P.;Brown Simon A. |
分类号 |
A61N1/04;A61N1/05;B82Y30/00;A61N1/36 |
主分类号 |
A61N1/04 |
代理机构 |
Lumen Patent Firm |
代理人 |
Lumen Patent Firm |
主权项 |
1. A neuro-electronic interface device comprising:
a micro-electrode; an interconnect in electrical contact with the micro-electrode; wherein the interconnect is conductive and is fabricated on a non-conductive surface; wherein the interconnect is a dendrite having scaling gradients that vary between 1.1 and 1.9 over a scaling range of more than one order of magnitude of magnification. |
地址 |
Eugene OR US |