| 发明名称 | Semiconductor device manufacturing method | ||
| 摘要 | A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber 12 (ST2); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST3), and a cycle including the exciting of the first gas (ST2) and the exciting of the second gas (ST3) is repeated multiple times. | ||
| 申请公布号 | US9082720(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414467182 | 申请日期 | 2014.08.25 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Ogawa Kazuto;Hirai Katsunori |
| 分类号 | H01L21/311;H01L21/308;H01L21/3065 | 主分类号 | H01L21/311 |
| 代理机构 | Pearne & Gordon LLP | 代理人 | Pearne & Gordon LLP |
| 主权项 | 1. A semiconductor device manufacturing method of etching a multilayered film, in which a first film and a second film having different relative permittivities from each other are alternately stacked on top of each other, with a mask in a processing chamber of a plasma processing apparatus, the semiconductor device manufacturing method comprising: exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into the processing chamber; and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber, wherein a cycle including the exciting of the first gas and the exciting of the second gas is repeated multiple times. | ||
| 地址 | Tokyo JP | ||