Semiconductor device

摘要

A semiconductor device includes a transistor, a light-emitting element, a first wiring, a driver circuit having a function of controlling the potential of the first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a first capacitor, and a second capacitor. One of a source and a drain of the transistor is connected to the light-emitting element. With this structure, voltage applied between the source and the gate of the transistor can be corrected in anticipation of variations in threshold voltage, so that the current supplied to the light-emitting element can be corrected.

主权项

1. A semiconductor device comprising:
a first transistor; a load; a first wiring; a second wiring; a first capacitor; and a second capacitor, wherein a first electrode of the first capacitor is electrically connected to the first wiring, wherein the first electrode of the first capacitor is electrically connected to a first electrode of the second capacitor, wherein a second electrode of the first capacitor is electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the second electrode of the first capacitor is electrically connected to a gate electrode of the first transistor, wherein the first electrode of the first capacitor is electrically connected to the other of the source electrode and the drain electrode of the first transistor, wherein the second electrode of the second capacitor is electrically connected to the other of the source electrode and the drain electrode of the first transistor, wherein the second wiring is electrically connected to the one of the source electrode and the drain electrode of the first transistor, wherein the load is electrically connected to the second electrode of the second capacitor, wherein the one of the source electrode and the drain electrode of the first transistor comprises a first region and a second region, wherein the other of the source electrode and the drain electrode comprises a third region, wherein the third region is interposed between the first region and the second region, and wherein the first transistor comprises a first channel formation region comprising an oxide semiconductor.