Semiconductor device having multi-layered bit line contact

摘要

A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first bit line contact over a semiconductor substrate, forming a second bit line contact that is coupled to the first bit line contact and has a larger width than the first bit line contact, and forming a bit line over the second bit line contact. When using the semiconductor device having a buried gate, although the bit line is formed to have a small width and the bit line pattern is misaligned, the method prevents incorrect coupling between a bit line and a bit line contact, so that it basically deteriorates unique characteristics of the semiconductor device.

主权项

1. A semiconductor device comprising:
a substrate; a bit line contact pattern disposed over the substrate, the bit line contact pattern having a stack structure of a first bit line contact and a second bit line contact, the second bit line contact being disposed over the first bit line contact; and a bit line disposed over the bit line contact pattern and electrically coupled to the bit line contact pattern; a first spacer disposed at a sidewall of the first bit line contact; and a second spacer disposed at a sidewall of the bit line and an outer sidewall of the second bit line contact, wherein the first bit line contact has a first width and the second bit line contact has a second width, the second width being larger than the first width, and wherein each of the first spacer and the second spacer includes an insulation film.