| 发明名称 | Nonvolatile semiconductor memory device, method for manufacturing same, and manufacturing apparatus | ||
| 摘要 | According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon. Concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side has a maximum between the semiconductor layer and the floating gate layer, and the maximum being located nearer to the semiconductor layer side than to the floating gate layer side. | ||
| 申请公布号 | US9082703(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414166998 | 申请日期 | 2014.01.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Murakoshi Atsushi;Sawa Keiichi |
| 分类号 | H01L21/02;H01L21/28;H01L29/423;H01L29/51 | 主分类号 | H01L21/02 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A nonvolatile semiconductor memory device comprising: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon,concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side having a maximum directly below the floating gate layer, andthe maximum being located nearer to the semiconductor layer side than to the floating gate layer side. | ||
| 地址 | Minato-ku JP | ||