| 发明名称 | Phase-change memory and semiconductor recording/reproducing device | ||
| 摘要 | A phase-change memory and a semiconductor recording reproducing device capable of reducing consumed power are provided. A SnxTe100-x/Sb2Te3 SL film obtained by depositing a SnxTe100-x film and a Sb2Te3 film layer by layer contains a SnTe/Sb2Te3 superlattice phase formed of SnTe and Sb2Te3, a SnSbTe alloy phase, and a Te phase. The SnTe/Sb2Te3 superlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnxTe100-x film is represented by 4 at. %≦X≦55 at. %. | ||
| 申请公布号 | US9082970(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201314050987 | 申请日期 | 2013.10.10 |
| 申请人 | Hitachi, Ltd. | 发明人 | Soeya Susumu;Odaka Takahiro;Shintani Toshimichi;Tominaga Junji |
| 分类号 | H01L45/00;C30B29/46;C30B29/68;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | McCormick, Paulding & Huber LLP | 代理人 | McCormick, Paulding & Huber LLP |
| 主权项 | 1. A phase-change memory comprising a recording/reproducing film containing Sn (tin), Sb (antimony), and Te (tellurium), wherein the recording/reproducing film contains: a SnTe/Sb2Te3 superlattice phase formed of SnTe and Sb2Te3; a SnSbTe alloy phase; and a Te phase. | ||
| 地址 | Tokyo JP | ||