Reactor for atomic layer deposition (ALD), application to encapsulation of an OLED device by deposition of a transparent AI2O3 film

摘要

The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.

主权项

1. A reactor for atomic layer deposition (ALD), comprising:
an ALD reaction chamber comprising a platen designed to hold a substrate, and being bounded internally by an upper surface, a lower surface and a lateral surface between the upper surface and the lower surface; at least one inlet orifice emerging from one of the surfaces bounding the chamber, and through which at least one gaseous precursor may be injected directly into the reaction chamber; and at least one outlet orifice emerging from one of the surfaces bounding the chamber, and through which gaseous species or particles present in the reaction chamber can be evacuated during use;wherein the reaction chamber comprises, within it, a plurality of walls each apertured with at least one orifice, the plurality of apertured walls extending around the platen and over at least most of the height between the lower surface and the upper surface, and further wherein at least one orifice in one apertured wall does not face an orifice in an adjacent apertured wall so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen during use in an ALD process.