发明名称 |
Adding decoupling function for tap cells |
摘要 |
A tap cell includes a well region and a well pickup region of the well region; a VDD power rail; and a VSS power rail. A MOS capacitor includes a gate electrode line acting as a first capacitor plate, and the well pickup region acting as a part of a second capacitor plate. A first one of the first and second capacitor plates is coupled to the VDD power rail, and a second one of the first and second capacitor plates is coupled to the VSS power rail. |
申请公布号 |
US9082886(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201113106521 |
申请日期 |
2011.05.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Kuo-Ji;Tien Li-Chun |
分类号 |
H01L29/94;H01L27/08 |
主分类号 |
H01L29/94 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A circuit comprising:
a tap cell comprising:
a well region;a first well pickup region of the well region;a VDD power rail comprising a first edge;a VSS power rail comprising a second edge parallel to the first edge of the VDD power rail;a first jog continuously connected to the VDD power rail and forming a continuous metal region with the VDD power rail, wherein the first jog extends more toward the VSS power rail than the first edge; anda first MOS capacitor comprising a first gate electrode line acting as a first capacitor plate, and the first well pickup region acting as a part of a second capacitor plate, wherein a first one of the first and second capacitor plates is overlapped by and connected to the first jog, and a second one of the first and second capacitor plates is coupled to the VSS power rail. |
地址 |
Hsin-Chu TW |