Trench forming method, metal wiring forming method, and method of manufacturing thin film transistor array panel

摘要

A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

主权项

1. A method of forming a thin film transistor array panel, the method comprising:
providing a first insulating layer on a substrate; providing an amorphous carbon layer on the first insulating layer; providing a second insulating layer on the amorphous carbon layer; providing an opening in the amorphous carbon layer, by patterning the second insulating layer and the amorphous carbon layer; and providing a trench in the first insulating layer, by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer comprising the opening as a mask, wherein in the providing the amorphous carbon layer, the amorphous carbon layer is formed by using a gas comprising carbon and hydrogen, and an assistant gas comprising at least one of helium or argon, and the gas comprising carbon and hydrogen comprises at least one of C2H4, C3H6, or C4H8 providing a photosensitive film on the second insulating layer, and exposing and developing the photosensitive film, to pattern the photosensitive film; etching the second insulating layer by using the patterned photosensitive film as a mask; etching the amorphous carbon layer by using the second insulating layer as a mask, to form the opening; and removing the photosensitive film.