发明名称 Semiconductor memory device storing refresh period information and operating method thereof
摘要 A semiconductor memory device which stores refresh period information thereby adjusting a refresh period and a method of operating the same. The semiconductor memory device includes a cell array and a refresh information storing unit. The cell array includes one or more cell regions each having a plurality of memory cells. The refresh information storing unit is configured to store first information including a first refresh period and second information including a second refresh period in correspondence to each of the cell regions. Memory cells included in each of the cell regions are refreshed at the first refresh period according to the first information in a first refresh time band and are refreshed at the second refresh period according to the second information in a second refresh time band.
申请公布号 US9082504(B2) 申请公布日期 2015.07.14
申请号 US201313936057 申请日期 2013.07.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Jung-Sik;Lee Jung-Bae
分类号 G11C7/00;G11C11/406;G11C29/50;G11C11/4076;G11C11/40 主分类号 G11C7/00
代理机构 Muir Patent Law, PLLC 代理人 Muir Patent Law, PLLC
主权项 1. A semiconductor memory device comprising: a cell array comprising one or more cell regions each having a plurality of memory cells; and a refresh information storing unit configured to store first information including a first refresh period, and second information including a second refresh period in correspondence to each of the cell regions, wherein memory cells included in each of the cell regions are refreshed at the first refresh period according to the first information in a first refresh time band and are refreshed at the second refresh period according to the second information in a second refresh time band.
地址 Yeongtong-gu, Suwon-si, Gyeonggi-do KR