Nonvolatile memory element and nonvolatile memory device

摘要

A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer.

主权项

1. A variable resistance nonvolatile memory element comprising:
a first electrode; a second electrode; and a variable resistance layer interposed between the first electrode and the second electrode and capable of reversibly switching between a high resistance state and a low resistance state based on a polarity of a voltage applied between the first electrode and the second electrode, wherein the variable resistance layer includes: a first oxide layer comprising a first transition metal oxide; a second oxide layer located between and in contact with the first oxide layer and the second electrode, comprising a second transition metal oxide, and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than a degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer.