发明名称 LOW RESISTANCE AREA MAGNETIC STACK
摘要 A magnetic element may be generally configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure has a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.
申请公布号 KR101536629(B1) 申请公布日期 2015.07.14
申请号 KR20130143042 申请日期 2013.11.22
申请人 SEAGATE TECHNOLOGY LLC 发明人 SANKAR VIJAY KARTHIK;COVINGTON MARK WILLIAM
分类号 H01L43/08 主分类号 H01L43/08
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