发明名称 |
Magnetic random access memory with perpendicular enhancement layer |
摘要 |
The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer. |
申请公布号 |
US9082951(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201414560740 |
申请日期 |
2014.12.04 |
申请人 |
Avalanche Technology, Inc. |
发明人 |
Gan Huadong;Huai Yiming;Zhou Yuchen;Wang Zihui;Wang Xiaobin;Yen Bing K.;Hao Xiaojie |
分类号 |
H01L29/82;H01L43/02;H01L43/08 |
主分类号 |
H01L29/82 |
代理机构 |
|
代理人 |
Yen Bing K. |
主权项 |
1. A magnetic tunnel junction (MTJ) memory element comprising:
a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to said magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with said second magnetic fixed sublayer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said first and second magnetic fixed sublayers having a second fixed magnetization direction that is substantially perpendicular to layer planes thereof and is substantially opposite to said first fixed magnetization direction. |
地址 |
Fremont CA US |