Method of manufacturing semiconductor device

摘要

In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor including a gate insulator and a gate electrode on a substrate. The method further includes forming an interconnect structure including one or more interconnect layers on the substrate by performing first and second processes one or more times, the first process forming an interconnect layer on the substrate, and the second process processing the interconnect layer into an interconnect pattern. The method further includes annealing the substrate by irradiating the substrate with a microwave, after at least one interconnect layer included in the one or more interconnect layers is processed into an interconnect pattern on the substrate.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a transistor including a gate insulator and a gate electrode above a substrate; forming an interconnect structure including one or more interconnect layers above the substrate by performing first and second processes one or more times, the first process forming an interconnect layer above the substrate, and the second process processing the interconnect layer into an interconnect pattern; and annealing the substrate by irradiating the substrate with a microwave, after at least one interconnect layer included in the one or more interconnect layers is processed into an interconnect pattern above the substrate, wherein the annealing heats an interface between the substrate and the gate insulator, and the method further includes discharging hydrogen during the annealing from a hydrogen supply source which is in a vicinity of the transistor.