Semiconductor device

摘要

A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.

主权项

1. A semiconductor device, comprising:
a substrate including a chip region; a plurality of dielectric films formed on the substrate; seal rings formed in a peripheral part of the chip region, the seal rings including a first seal ring and a second seal ring both provided through at least one of the plurality of dielectric films in the peripheral part of the chip region; a protection film formed on a first dielectric film which is an uppermost film among the plurality of dielectric films; a first opening provided in the protection film and on the first seal ring; and a cap layer disposed in the first opening and in contact with the first seal ring, wherein the first seal ring is disposed outside of the second seal ring and surrounds the second seal ring, an entirety of an upper surface of the second seal ring is covered by the protection film, the first opening has side surfaces, one of which located farther from the second seal ring is located outside an upper surface of the first seal ring when viewed from above, and a thickness of the cap layer in a depth direction at a center of the first opening is larger than a thickness of the protection film in the depth direction.