Stair step formation using at least two masks

摘要

Apparatuses and methods for stair step formation using at least two masks, such as in a memory device, are provided. One example method can include forming a first mask over a conductive material to define a first exposed area, and forming a second mask over a portion of the first exposed area to define a second exposed area, the second exposed area is less than the first exposed area. Conductive material is removed from the second exposed area. An initial first dimension of the second mask is less than a first dimension of the first exposed area and an initial second dimension of the second mask is at least a second dimension of the first exposed area plus a distance equal to a difference between the initial first dimension of the second mask and a final first dimension of the second mask after a stair step structure is formed.

主权项

1. A memory, comprising:
a vertical string of memory cells; horizontal conductive lines coupled to the memory cells, the horizontal conductive lines formed from a stack of alternating conductive materials and insulating materials having a stair step structure at only a portion of one edge of the stack; and a string driver coupled to the conductive lines via vertical conductors coupled to respective stair steps of the stair step structure.