| 发明名称 | Semiconductor device and power source device | ||
| 摘要 | A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area. | ||
| 申请公布号 | US9082756(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414225923 | 申请日期 | 2014.03.26 |
| 申请人 | Fujitsu Limited | 发明人 | Shimizu Kozo;Okamoto Keishiro;Imaizumi Nobuhiro;Imada Tadahiro;Watanabe Keiji |
| 分类号 | H01L23/48;H01L23/00;H01L23/31 | 主分类号 | H01L23/48 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device comprising: a support plate; a semiconductor chip formed over the support plate; an alloy layer, formed between the support plate and the semiconductor chip, includes an alloy with a first metal and a second metal, wherein the semiconductor chip is bonded with the support plate by metal-bonding with the alloy layer; and a first metal layer, formed around the alloy layer and formed between the support plate and the semiconductor chip, includes the first metal, wherein the first metal layer is bonded with the support plate. | ||
| 地址 | Kawasaki JP | ||