Half-FinFET semiconductor device and related method

摘要

According to one embodiment, a half-FinFET semiconductor device comprises a gate structure formed over a semiconductor body. The semiconductor body includes a source region comprised of a plurality of fins extending beyond a first side of the gate structure and a continuous drain region adjacent a second side of the gate structure opposite the plurality of fins. The continuous drain region causes the half-FinFET semiconductor device to have a reduced ON-resistance. A method for fabricating a semiconductor device having a half-FinFET structure comprises designating source and drain regions in a semiconductor body, etching the source region to produce a plurality of source fins while masking the drain region during the etching to provide a continuous drain region, thereby resulting in the half-FinFET structure having a reduced ON-resistance.

主权项

1. A half-FinFET semiconductor device comprising:
a gate structure formed over a semiconductor body; said semiconductor body including a source region comprised of a plurality of fins extending beyond a first side of said gate structure; said semiconductor body further comprising a continuous drain region adjacent to a second side of said gate structure which is opposite of said plurality of fins; and a drain extension well that is formed in between the continuous drain region and the gate structure.