Structures comprising masks comprising carbon

摘要

The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O2, SO2 and a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising O2 and a gas comprising SO2 and a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O2 and SO2 dry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.

主权项

1. A structure, comprising:
an intermediate mask comprising carbon overlying a semiconductor device structure; a negative mask comprising discrete structures comprising carbon overlying the intermediate mask, wherein each of the discrete structures comprising carbon overlying the intermediate mask has a width between about 32 nm and about 63 nm; and a spacer mask comprising silicon dioxide on side-walls of the discrete structures of the negative mask, the carbon of the discrete structures having an upper surface at least partially coplanar with an upper surface of the spacer mask.