Method for wear leveling in a nonvolatile memory

摘要

A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

主权项

1. A method of managing data in electrically erasable and programmable nonvolatile memory cells, the method comprising:
defining data pages in a first nonvolatile memory zone; defining in the data pages programmable data blocks; defining in a second nonvolatile memory zone, metadata pages comprising metadata structures associated with the data pages present in the first nonvolatile memory zone and wherein each of the data pages is associated with a metadata structure of the metadata pages, each metadata structure including a wear counter containing a value representative of a number of times that the data page associated with the metadata structure has been erased; attributing to each metadata page a wear counter containing a value representative of a number of times that a metadata page to which the wear counter is attributed has been erased; and before erasing the metadata page, writing in the second nonvolatile memory zone a temporary information structure including an address in the second nonvolatile memory zone of the metadata page and the wear counter attributed to the metadata page.