发明名称 Resist stripping solution composition, and method for stripping resist by using same
摘要 Disclosed is a resist stripping solution composition, which is highly capable of removing a resist pattern and an etching residue after dry etching or wet etching, manifests excellent anticorrosive effects on metal wiring including aluminum and/or copper because a predetermined polyol compound is used, and also can process a number of substrates because a predetermined amide compound is used, thus greatly contributing to reducing the cost. A method of stripping a resist using the resist stripping solution composition is also provided.
申请公布号 US9081291(B2) 申请公布日期 2015.07.14
申请号 US201013387087 申请日期 2010.08.10
申请人 Dongwoo Fine-Chem Co., Ltd. 发明人 Park Myun-Kyu;Kim Tae-Hee;Kim Jeong-Hyun;Lee Seung-Yong;Kim Byoung-Mook
分类号 G03F7/42;C11D11/00 主分类号 G03F7/42
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A resist stripping solution composition, comprising (a) a basic compound including one or more selected from among compounds represented by Formulas 1 to 3 below, (b) an amide compound represented by Formula 4 below, (c) a polar solvent, and (d) a polyol compound represented by Formula 5 below: wherein R1, R2, R3, R4, R5 and R6 are each independently hydrogen, a C1˜10 alkyl group substituted or unsubstituted with amino, a C2˜10 alkenyl group, a C1˜10 hydroxyalkyl group, a carboxylic group, a C1˜10 alkyl group substituted with C1˜10 alkoxy substituted or unsubstituted with hydroxyl, an amino group substituted or unsubstituted with C1˜4 alkyl, a phenyl group, or a benzyl group; wherein R7, R8 and R9 are each independently hydrogen, a C1˜5 alkyl group, a C2˜5 alkenyl group, a C1˜10 hydroxyalkyl group, a carboxylic group, a C1˜5 alkyl group substituted with C1˜10 alkoxy, or an amino group substituted or unsubstituted with C1˜4 alkyl; and wherein R10 and R11 are each independently a C1˜10 alkylene group, a C2˜10 alkenylene group, a C1˜10 hydroxyalkylene group, a C1˜10 alkylene group substituted with C1˜10 alkoxy, or a bond, wherein, based on a total weight of the resist stripping composition, the resist stripping solution composition includes, (a) 5˜30 wt % of the basic compound including one or more compounds represent by Formulas 1 to 3, (b) 20˜80 wt % of the amide compound represented by Formula 4, (c) 10˜70 wt % of the polar solvent, and (d) 0.05˜20 wt % of the polyol compound represented by Formula 5.
地址 KR