发明名称 |
Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
摘要 |
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition. |
申请公布号 |
US9081279(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201414158490 |
申请日期 |
2014.01.17 |
申请人 |
FUJIFILM Corporation |
发明人 |
Kanda Hiromi;Kanna Shinichi |
分类号 |
G03F7/039;G03F7/004;G03F7/075;G03F7/20;G03F7/30;C07C69/653 |
主分类号 |
G03F7/039 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A positive resist composition, which comprises:
(A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent, wherein: the amount added of the resin (C) is 0.1 to 5 mass %, based on the entire solids content of the positive resist composition; the resin (C) is a linear polymer; and the resin (C) contains hexafluoroisopropanol. |
地址 |
Tokyo JP |