Bypass capacitors for high voltage bias power in the mid frequency RF range

摘要

A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of decoupling arcing RF signals in a plasma chamber is also disclosed.

主权项

1. A system for decoupling arcing RF signals in a plasma chamber comprising:
a plasma chamber including:
a top electrode;an electrostatic chuck for supporting a semiconductor wafer; anda capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck;a plurality of lift pins supported in a corresponding plurality of lift pin holes in the surface of the electrostatic chuck, wherein each one of the plurality of lift pins has a clearance of less than about 0.011 inches (0.25 mm) between a corresponding side in a corresponding one of a plurality of lift pin holes in the surface of the electrostatic chuck.