发明名称 |
Light emitting diode assembly and method for fabricating the same |
摘要 |
The present invention is directed to a light emitting diode (LED) assembly and a method for fabricating the same. According to the present invention, there is provided an LED assembly comprising an LED comprising at least an N-type semiconductor layer and a P-type semiconductor layer; and bumps provided on the LED and electrically connected to the semiconductor layers, wherein the bump comprises a first region made of a gold (Au) compound including tin (Sn) and a second region made of gold. |
申请公布号 |
US9082933(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201013881252 |
申请日期 |
2010.12.09 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Lee Kyu Ho;Suh Dae Woong;Choi Jae Ryang;Kim Chang Hoon |
分类号 |
H01L33/36;H01L33/00;H01S5/024;H01L33/62;H01L23/00;H01L33/38 |
主分类号 |
H01L33/36 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A light emitting diode (LED) assembly, comprising:
an LED comprising an N-type semiconductor layer and a P-type semiconductor layer; bumps disposed on the LED and electrically connected to the semiconductor layers; electrode pads electrically connected to the semiconductor layers; an N-pad disposed between the N-type semiconductor layer and a first bump among the bumps; and a P-pad disposed between the P-type semiconductor layer and a second bump among the bumps, wherein the bumps comprise a first region comprising gold (Au) and tin (Sn), a second region comprising gold, and a third region disposed between the first region and the second region, the third region comprising a diffusion barrier layer comprising nickel (Ni), and wherein the first region contacts an electrode pad among the electrode pads, and the second region is disposed between the first region and a semiconductor layer among the semiconductor layers. |
地址 |
Ansan-si KR |