3C-SiC transistor

摘要

A bipolar power semiconductor transistor is disclosed. The transistor includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type disposed on the semiconductor substrate; a semiconductor drift region of a second conductivity type, opposite the first conductivity type, disposed on the first semiconductor region, a body region of the first conductivity type located within the semiconductor drift region, a source region of the second conductivity type located within the body region, a gate placed above and in contact to the source region, the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. The semiconductor substrate includes a material having silicon (Si) and the first semiconductor region includes a material having 3-step cubic silicon carbide (3C-SiC).

主权项

1. A bipolar power semiconductor transistor comprising:
a semiconductor substrate of a first conductivity type; a first semiconductor region of the first conductivity type disposed on the semiconductor substrate; a semiconductor drift region of a second conductivity type, opposite the first conductivity type, disposed on the first semiconductor region; a body region of the first conductivity type located within the semiconductor drift region; a source region of the second conductivity type located within the body region; a gate placed above and in contact to the source region, the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region; wherein the semiconductor substrate comprises a material comprising silicon (Si) and the first semiconductor region comprises a material comprising 3-step cubic silicon carbide (3C-SiC).